Wide Bandgap Process Integration Engineer NCG

Change the world. Love your job. TI is seeking an innovative and highly skilled GaN Process Integration Engineer to join our cutting-edge Gallium Nitride (GaN) Technology Development Team. This role offers the unique opportunity to work at the forefront of developing Gallium Nitride technology that is redefining the power electronics landscape — enabling higher efficiency, faster switching, and smaller, more reliable systems. You will be instrumental in developing and scaling GaN power process technologies for high-volume manufacturing. You’ll collaborate across disciplines to deliver state-of-the-art devices with world-class performance and reliability. About the job This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to: GaN device simulations (TCAD), device design, layout Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges Collaboration with fab/manufacturing engineers to ensure device manufacturability Collaboration with reliability engineers to meet device reliability requirements Failure root-cause investigation for device/process/reliabil